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集成電路高低溫測試技術在新品檢測中的應用

作者：網(wang)絡編輯(ji)：瑞(rui)凱儀器來源：網(wang)絡發布日(ri)期： 2020.07.22

近幾年來，本(ben)實驗室連續開展了大規(gui)模集成電(dian)(dian)(dian)路(lu)(lu)(lu)的(de)新品檢測(ce)(ce)工作，如偵察運算電(dian)(dian)(dian)路(lu)(lu)(lu)、BCH編譯碼器、CRT地(di)址產生(sheng)電(dian)(dian)(dian)路(lu)(lu)(lu)及接(jie)口電(dian)(dian)(dian)路(lu)(lu)(lu)等(deng)，基本(ben)上都(dou)是規(gui)模較大的(de)CMOS電(dian)(dian)(dian)路(lu)(lu)(lu)，對靜電(dian)(dian)(dian)敏感，工作速度(du)較快(kuai)。在(zai)高(gao)(gao)、低(di)溫(wen)(wen)電(dian)(dian)(dian)性能(neng)測(ce)(ce)試中成功地(di)采用(yong)了該(gai)集成電(dian)(dian)(dian)路(lu)(lu)(lu)高(gao)(gao)、低(di)溫(wen)(wen)電(dian)(dian)(dian)性能(neng)測(ce)(ce)試系(xi)統，積累了一些(xie)有益的(de)經驗。通過實際應用(yong)發現，必須注(zhu)意以下一些(xie)具體的(de)環節，如測(ce)(ce)試板(ban)的(de)隔(ge)離(li)、防潮，被測(ce)(ce)器件的(de)靜電(dian)(dian)(dian)保(bao)護，被測(ce)(ce)器件芯(xin)片溫(wen)(wen)度(du)的(de)確定等(deng)問題，才能(neng)快(kuai)速、準確地(di)完成CMOS VLSI的(de)高(gao)(gao)、低(di)溫(wen)(wen)電(dian)(dian)(dian)性能(neng)測(ce)(ce)試。

在(zai)(zai)(zai)(zai)高(gao)(gao)低(di)溫(wen)(wen)(wen)(wen)(wen)(wen)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)時(shi)(shi)，將(jiang)變溫(wen)(wen)(wen)(wen)(wen)(wen)頭直接(jie)罩(zhao)在(zai)(zai)(zai)(zai)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)設備的(de)(de)(de)DUT板(ban)(ban)(ban)(ban)上，如果不采取(qu)隔離(li)措施，測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)設備的(de)(de)(de)DUT板(ban)(ban)(ban)(ban)將(jiang)會處(chu)于(yu)+125℃的(de)(de)(de)高(gao)(gao)溫(wen)(wen)(wen)(wen)(wen)(wen)和-55℃的(de)(de)(de)低(di)溫(wen)(wen)(wen)(wen)(wen)(wen)環境，勢(shi)必影(ying)響(xiang)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)系(xi)統的(de)(de)(de)性(xing)能和測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)結果。在(zai)(zai)(zai)(zai)實際測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)時(shi)(shi)，我們將(jiang)一(yi)種(zhong)防靜(jing)(jing)電的(de)(de)(de)隔熱(re)(re)膠(jiao)墊(dian)放在(zai)(zai)(zai)(zai)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)系(xi)統的(de)(de)(de)DUT板(ban)(ban)(ban)(ban)上，在(zai)(zai)(zai)(zai)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)夾具處(chu)開一(yi)小口將(jiang)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)夾具露出，這(zhe)樣對測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)系(xi)統的(de)(de)(de)DUT板(ban)(ban)(ban)(ban)起到一(yi)定的(de)(de)(de)保(bao)護(hu)作用，但如果DUT板(ban)(ban)(ban)(ban)長期處(chu)于(yu)高(gao)(gao)溫(wen)(wen)(wen)(wen)(wen)(wen)或低(di)溫(wen)(wen)(wen)(wen)(wen)(wen)環境，隔熱(re)(re)膠(jiao)墊(dian)的(de)(de)(de)作用將(jiang)大為減(jian)弱(ruo)，基于(yu)此，我們在(zai)(zai)(zai)(zai)設置溫(wen)(wen)(wen)(wen)(wen)(wen)度控(kong)(kong)制(zhi)程(cheng)序(xu)(xu)時(shi)(shi)對它進(jin)行(xing)了(le)調整(zheng)。在(zai)(zai)(zai)(zai)高(gao)(gao)溫(wen)(wen)(wen)(wen)(wen)(wen)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)時(shi)(shi)，將(jiang)溫(wen)(wen)(wen)(wen)(wen)(wen)度控(kong)(kong)制(zhi)程(cheng)序(xu)(xu)設為，在(zai)(zai)(zai)(zai)每個樣品(pin)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)完成換(huan)樣品(pin)前(qian)，讓變溫(wen)(wen)(wen)(wen)(wen)(wen)頭向DUT板(ban)(ban)(ban)(ban)送(song)涼氣流10s，然(ran)后(hou)(hou)才結束溫(wen)(wen)(wen)(wen)(wen)(wen)控(kong)(kong)程(cheng)序(xu)(xu)換(huan)樣品(pin)，這(zhe)樣就加速了(le)DUT板(ban)(ban)(ban)(ban)的(de)(de)(de)散(san)熱(re)(re),將(jiang)高(gao)(gao)溫(wen)(wen)(wen)(wen)(wen)(wen)對DUT板(ban)(ban)(ban)(ban)造(zao)成的(de)(de)(de)影(ying)響(xiang)降(jiang)到。在(zai)(zai)(zai)(zai)低(di)溫(wen)(wen)(wen)(wen)(wen)(wen)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)時(shi)(shi)，將(jiang)溫(wen)(wen)(wen)(wen)(wen)(wen)度控(kong)(kong)制(zhi)程(cheng)序(xu)(xu)設為，在(zai)(zai)(zai)(zai)每個樣品(pin)測(ce)(ce)(ce)(ce)試(shi)(shi)(shi)(shi)(shi)(shi)完成換(huan)樣品(pin)前(qian)，讓變溫(wen)(wen)(wen)(wen)(wen)(wen)頭向DUT板(ban)(ban)(ban)(ban)送(song)熱(re)(re)氣流10s。然(ran)后(hou)(hou)才結束溫(wen)(wen)(wen)(wen)(wen)(wen)控(kong)(kong)程(cheng)序(xu)(xu)換(huan)樣品(pin)，這(zhe)樣DUT板(ban)(ban)(ban)(ban)上的(de)(de)(de)溫(wen)(wen)(wen)(wen)(wen)(wen)度已接(jie)近室溫(wen)(wen)(wen)(wen)(wen)(wen)，在(zai)(zai)(zai)(zai)換(huan)樣品(pin)時(shi)(shi)就避(bi)免了(le)環境溫(wen)(wen)(wen)(wen)(wen)(wen)度與低(di)溫(wen)(wen)(wen)(wen)(wen)(wen)的(de)(de)(de)對流、造(zao)成DUT板(ban)(ban)(ban)(ban)凝水。對于(yu)被測(ce)(ce)(ce)(ce)器件的(de)(de)(de)防靜(jing)(jing)電措施有:隔熱(re)(re)膠(jiao)墊(dian)采用防靜(jing)(jing)電材(cai)料(liao);遮蓋被測(ce)(ce)(ce)(ce)器件的(de)(de)(de)小罩(zhao)由導(dao)熱(re)(re)防靜(jing)(jing)電材(cai)料(liao)所(suo)制(zhi)。

在用該高、低溫(wen)(wen)(wen)測(ce)試(shi)系(xi)統(tong)(tong)做溫(wen)(wen)(wen)度(du)(du)測(ce)試(shi)時(shi)(shi)(shi)(shi)，系(xi)統(tong)(tong)有溫(wen)(wen)(wen)度(du)(du)傳感(gan)器(qi)(qi)叮測(ce)到(dao)(dao)器(qi)(qi)件(jian)底部的(de)溫(wen)(wen)(wen)度(du)(du)，雖然氣流是(shi)(shi)重(zhong)直于DUT表(biao)面而下，但DUT的(de)底部還是(shi)(shi)屬于器(qi)(qi)件(jian)表(biao)面，如何(he)確定DUT芯(xin)(xin)片(pian)溫(wen)(wen)(wen)度(du)(du)的(de)建(jian)(jian)立(li)時(shi)(shi)(shi)(shi)間(jian)，是(shi)(shi)個比較復雜(za)的(de)問題。因為DUT芯(xin)(xin)片(pian)溫(wen)(wen)(wen)度(du)(du)的(de)建(jian)(jian)立(li)時(shi)(shi)(shi)(shi)間(jian)受很多因系(xi)的(de)影響，如DUT的(de)材料(liao)、形狀尺(chi)寸，溫(wen)(wen)(wen)度(du)(du)以(yi)及氣體流量的(de)大(da)小等因素的(de)影響。不同的(de)器(qi)(qi)件(jian)芯(xin)(xin)片(pian)溫(wen)(wen)(wen)度(du)(du)的(de)建(jian)(jian)立(li)時(shi)(shi)(shi)(shi)間(jian)是(shi)(shi)不一樣(yang)的(de)，溫(wen)(wen)(wen)度(du)(du)建(jian)(jian)立(li)時(shi)(shi)(shi)(shi)間(jian)是(shi)(shi)指(zhi)系(xi)統(tong)(tong)變溫(wen)(wen)(wen)( 升溫(wen)(wen)(wen)獲(huo)降溫(wen)(wen)(wen))開始，到(dao)(dao)建(jian)(jian)立(li)新的(de)熱平衡，即被測(ce)器(qi)(qi)件(jian)芯(xin)(xin)片(pian)溫(wen)(wen)(wen)度(du)(du)達到(dao)(dao)設定值這(zhe)一段時(shi)(shi)(shi)(shi)間(jian)。某公司給(gei)出了(le)1000Ω電阻溫(wen)(wen)(wen)度(du)(du)探測(ce)器(qi)(qi)(RTD)的(de)溫(wen)(wen)(wen)度(du)(du)建(jian)(jian)立(li)時(shi)(shi)(shi)(shi)間(jian)曲線，如圖(tu)3所示。圖(tu)3表(biao)明(ming)不同的(de)RTD其溫(wen)(wen)(wen)度(du)(du)建(jian)(jian)立(li)時(shi)(shi)(shi)(shi)間(jian)是(shi)(shi)不同的(de)。

不同的RTD其溫度建立時間是不同

DUT芯(xin)(xin)片(pian)(pian)溫(wen)度(du)的(de)建立(li)時(shi)(shi)間對于高(gao)、低溫(wen)測(ce)試(shi)是非常重(zhong)要的(de)指(zhi)標，只有在(zai)大于建立(li)時(shi)(shi)間的(de)時(shi)(shi)間段(duan)內測(ce)試(shi)，測(ce)試(shi)的(de)數(shu)據才能(neng)真正地反映設(she)定(ding)溫(wen)度(du)點的(de)性(xing)能(neng)及具(ju)有重(zhong)復(fu)性(xing)。對于復(fu)雜的(de)大規模集成電(dian)路(lu)，我(wo)們采取在(zai)開(kai)始(shi)高(gao)、低溫(wen)測(ce)試(shi)前，通(tong)過(guo)反復(fu)試(shi)驗(yan)，確(que)(que)定(ding)被(bei)測(ce)器(qi)件芯(xin)(xin)片(pian)(pian)溫(wen)度(du)的(de)建立(li)時(shi)(shi)間。在(zai)熱流系(xi)統顯(xian)示達(da)到設(she)定(ding)溫(wen)度(du)開(kai)始(shi)，對被(bei)測(ce)器(qi)件進行多次(ci)電(dian)參數(shu)測(ce)試(shi)，當(dang)其電(dian)參數(shu)趨(qu)于穩定(ding)并(bing)具(ju)有可重(zhong)復(fu)性(xing)時(shi)(shi)，將這段(duan)時(shi)(shi)間確(que)(que)定(ding)為DUT芯(xin)(xin)片(pian)(pian)溫(wen)度(du)的(de)建立(li)時(shi)(shi)間。經過(guo)反復(fu)試(shi)驗(yan)發現，系(xi)統的(de)溫(wen)度(du)傳感器(qi)測(ce)得的(de)被(bei)測(ce)器(qi)件底部溫(wen)度(du)與芯(xin)(xin)片(pian)(pian)溫(wen)度(du)基本一致。

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