MEMS器件老煉試驗
作(zuo)者：
salmon范
編輯：
瑞凱儀(yi)器
來源：
bibil.cn
發布(bu)日期： 2021.06.09
1、目的(de)
老(lao)煉試(shi)驗的(de)(de)目的(de)(de)是為了篩選(xuan)或(huo)(huo)剔除那些(xie)(xie)勉強合格的(de)(de)器件(jian)(jian)。這些(xie)(xie)器件(jian)(jian)或(huo)(huo)是本身(shen)具有(you)固有(you)的(de)(de)缺陷(xian)(xian)或(huo)(huo)者其缺陷(xian)(xian)產生于制造工藝的(de)(de)控制不當，這些(xie)(xie)缺陷(xian)(xian)會造成與時間和應(ying)(ying)力有(you)關的(de)(de)失(shi)效(xiao)(xiao)(xiao)。如不進行(xing)老(lao)煉試(shi)驗，這些(xie)(xie)有(you)缺陷(xian)(xian)的(de)(de)器件(jian)(jian)在(zai)使用(yong)條件(jian)(jian)下會出現初(chu)期致命(ming)失(shi)效(xiao)(xiao)(xiao)或(huo)(huo)早(zao)期壽命(ming)失(shi)效(xiao)(xiao)(xiao)。因此，篩選(xuan)時用(yong)額(e)定(ding)工作條件(jian)(jian)或(huo)(huo)在(zai)額(e)定(ding)工作條件(jian)(jian)之上對MEMS加應(ying)(ying)力，或(huo)(huo)施(shi)加能以相(xiang)等的(de)(de)或(huo)(huo)更高的(de)(de)靈敏度(du)揭(jie)示出隨時間和應(ying)(ying)力變化的(de)(de)失(shi)效(xiao)(xiao)(xiao)模式的(de)(de)等效(xiao)(xiao)(xiao)篩選(xuan)條件(jian)(jian)。
2、設備(bei)
應(ying)(ying)提(ti)供適當的(de)(de)(de)插(cha)座和(he)其(qi)(qi)他安裝(zhuang)手段，使得(de)在(zai)規(gui)定(ding)結構(gou)中(zhong)被(bei)試(shi)(shi)器(qi)(qi)件(jian)(jian)(jian)(jian)引(yin)出(chu)端(duan)有(you)可(ke)靠的(de)(de)(de)電(dian)(dian)(dian)連接(jie)安裝(zhuang)的(de)(de)(de)方式應(ying)(ying)設(she)計成(cheng)器(qi)(qi)件(jian)(jian)(jian)(jian)內(nei)部的(de)(de)(de)耗(hao)(hao)熱(re)不(bu)(bu)會(hui)通(tong)過傳導方式消散，只(zhi)能(neng)在(zai)規(gui)定(ding)的(de)(de)(de)環境溫度(du)(du)或(huo)在(zai)該溫度(du)(du)之上(shang)通(tong)過器(qi)(qi)件(jian)(jian)(jian)(jian)引(yin)出(chu)端(duan)和(he)必要(yao)的(de)(de)(de)電(dian)(dian)(dian)連接(jie)散熱(re)。設(she)備應(ying)(ying)能(neng)在(zai)被(bei)試(shi)(shi)器(qi)(qi)件(jian)(jian)(jian)(jian)引(yin)出(chu)端(duan)上(shang)提(ti)供規(gui)定(ding)的(de)(de)(de)偏置(zhi)，并且若(ruo)有(you)規(gui)定(ding)時(shi)(shi)，還應(ying)(ying)監測輸入激(ji)勵或(huo)輸出(chu)響應(ying)(ying)。電(dian)(dian)(dian)源(yuan)和(he)電(dian)(dian)(dian)流(liu)調節電(dian)(dian)(dian)阻器(qi)(qi)應(ying)(ying)至少能(neng)在(zai)整個試(shi)(shi)驗過程中(zhong)，只(zhi)要(yao)其(qi)(qi)電(dian)(dian)(dian)源(yuan)電(dian)(dian)(dian)壓(ya)、環境溫度(du)(du)等(deng)(deng)條(tiao)件(jian)(jian)(jian)(jian)的(de)(de)(de)變化在(zai)常規(gui)范(fan)圍內(nei)，均能(neng)保持規(gui)定(ding)的(de)(de)(de)工作(zuo)條(tiao)件(jian)(jian)(jian)(jian)。試(shi)(shi)驗設(she)備好應(ying)(ying)安排成(cheng)使器(qi)(qi)件(jian)(jian)(jian)(jian)只(zhi)出(chu)現(xian)自然(ran)對流(liu)冷(leng)卻。試(shi)(shi)驗條(tiao)件(jian)(jian)(jian)(jian)導致明顯的(de)(de)(de)功(gong)率(lv)耗(hao)(hao)散時(shi)(shi)，試(shi)(shi)驗設(she)備應(ying)(ying)設(she)置(zhi)成(cheng)使每(mei)個器(qi)(qi)件(jian)(jian)(jian)(jian)產生近似平均的(de)(de)(de)功(gong)率(lv)耗(hao)(hao)散，而不(bu)(bu)管器(qi)(qi)件(jian)(jian)(jian)(jian)是單獨(du)試(shi)(shi)驗還是成(cheng)組試(shi)(shi)驗。試(shi)(shi)驗電(dian)(dian)(dian)路(lu)(lu)不(bu)(bu)必補償單個器(qi)(qi)件(jian)(jian)(jian)(jian)特(te)性的(de)(de)(de)正常變化，但是應(ying)(ying)設(she)置(zhi)得(de)使一(yi)組中(zhong)的(de)(de)(de)某(mou)個器(qi)(qi)件(jian)(jian)(jian)(jian)失效和(he)出(chu)現(xian)異常時(shi)(shi)(即(ji)開路(lu)(lu)、短路(lu)(lu)等(deng)(deng))不(bu)(bu)致對該組中(zhong)其(qi)(qi)他器(qi)(qi)件(jian)(jian)(jian)(jian)的(de)(de)(de)試(shi)(shi)驗效果產生不(bu)(bu)良影響。
3、程(cheng)序
MEMS器件(jian)應按規(gui)(gui)定(ding)(ding)(ding)時(shi)間(jian)和(he)溫(wen)(wen)(wen)(wen)度(du)(du)進(jin)行規(gui)(gui)定(ding)(ding)(ding)條件(jian)的老煉(lian)篩選試驗(yan)。若無其他(ta)規(gui)(gui)定(ding)(ding)(ding),在表1確定(ding)(ding)(ding)的等效時(shi)間(jian)和(he)溫(wen)(wen)(wen)(wen)度(du)(du)下進(jin)行。表1中對不同器件(jian)等級(ji)規(gui)(gui)定(ding)(ding)(ding)的溫(wen)(wen)(wen)(wen)度(du)(du)——時(shi)間(jian)組合關系(xi)均可作為試驗(yan)條件(jian)。試驗(yan)前(qian)(qian)確定(ding)(ding)(ding)的試驗(yan)條件(jian)(時(shi)間(jian)和(he)溫(wen)(wen)(wen)(wen)度(du)(du))應予以(yi)記錄(lu)并貫穿整個試驗(yan)過程。老煉(lian)前(qian)(qian)和(he)老煉(lian)后測量(liang)應按規(gui)(gui)定(ding)(ding)(ding)進(jin)行。
3.1試(shi)驗條件(jian)
3.1.1試驗溫度
老煉試驗環境溫度應至少為125℃，承制方可以增加試驗溫度,并按表1減少相應的試驗時間。因為在正常情況下芯片溫將明顯地高于環境溫度，所以應設計成使試驗和工作時的額定芯片溫度不超過規定值。規定的試驗溫度是在高溫烤箱中工作區域內所有器件受到的環境溫度。為了保證這一條件的實現，可對高溫烤箱的內部結構、負荷、控制或監測儀器的放置位置、空氣或高溫烤箱內其他氣體的流動或液體媒質等各方面作必要的調整。在校準時，應使高溫烤箱處于滿負荷但不加功率的狀態，調節指示器的傳感器探頭位置，使其位于高溫烤箱內工作區域的溫度處。
3.1.1大功(gong)率 MEMS器件的試驗溫度
不管器件的(de)功率大小，所有器件都應能(neng)在(zai)(zai)其額定工作(zuo)溫(wen)度(du)(du)(du)下進行老(lao)煉或(huo)壽(shou)命(ming)試驗(yan)。對(dui)于(yu)采(cai)用環境(jing)(jing)溫(wen)度(du)(du)(du)TA表(biao)(biao)示(shi)工作(zuo)溫(wen)度(du)(du)(du)的(de)器件，試驗(yan)溫(wen)度(du)(du)(du)按表(biao)(biao)1的(de)規(gui)定。對(dui)于(yu)采(cai)用外殼溫(wen)度(du)(du)(du)Tc表(biao)(biao)示(shi)其工作(zuo)溫(wen)度(du)(du)(du)的(de)器件，如果環境(jing)(jing)溫(wen)度(du)(du)(du)會引起芯(xin)片溫(wen)度(du)(du)(du)超過200℃,老(lao)煉和壽(shou)命(ming)試驗(yan)時(shi)的(de)環境(jing)(jing)工作(zuo)溫(wen)度(du)(du)(du)可從125℃減少到某-一個溫(wen)度(du)(du)(du)值而無需改變試驗(yan)時(shi)間(jian)(jian)。應能(neng)證明在(zai)(zai)該環境(jing)(jing)溫(wen)度(du)(du)(du)下芯(xin)片在(zai)(zai)175℃到200℃之間(jian)(jian)，Tc等(deng)于(yu)或(huo)大于(yu)125℃。應有一組數據表(biao)(biao)明減小環境(jing)(jing)溫(wen)度(du)(du)(du)的(de)合理性(xing)。
3.1.1.2多芯片模塊器件的試(shi)驗(yan)溫度
應(ying)按(an)表1的(de)(de)(de)(de)規(gui)定(ding)(ding)(ding)(ding)確定(ding)(ding)(ding)(ding)老(lao)煉(lian)(lian)時(shi)的(de)(de)(de)(de)環(huan)(huan)境溫(wen)(wen)(wen)(wen)度(du)(du)或殼溫(wen)(wen)(wen)(wen)。但按(an)殼溫(wen)(wen)(wen)(wen)老(lao)煉(lian)(lian)時(shi)至少應(ying)采(cai)用對(dui)該(gai)器件(jian)(jian)(jian)(jian)確定(ding)(ding)(ding)(ding)的(de)(de)(de)(de)工作(zuo)殼溫(wen)(wen)(wen)(wen)(Tc)。器件(jian)(jian)(jian)(jian)老(lao)煉(lian)(lian)時(shi)應(ying)采(cai)用詳細規(gui)范中規(gui)定(ding)(ding)(ding)(ding)的(de)(de)(de)(de)工作(zuo)溫(wen)(wen)(wen)(wen)度(du)(du)和負載(zai)條(tiao)件(jian)(jian)(jian)(jian)。由(you)于(yu)在正(zheng)常情況下，殼溫(wen)(wen)(wen)(wen)和芯片溫(wen)(wen)(wen)(wen)度(du)(du)明顯高于(yu)環(huan)(huan)境溫(wen)(wen)(wen)(wen)度(du)(du)，應(ying)該(gai)改進結構(gou)，使溫(wen)(wen)(wen)(wen)度(du)(du)不要(yao)超過詳細規(gui)范中規(gui)定(ding)(ding)(ding)(ding)的(de)(de)(de)(de)額定(ding)(ding)(ding)(ding)芯片溫(wen)(wen)(wen)(wen)度(du)(du)和聚合(he)材料(liao)固化(hua)溫(wen)(wen)(wen)(wen)度(du)(du)。若(ruo)未規(gui)定(ding)(ding)(ding)(ding)結溫(wen)(wen)(wen)(wen)，則(ze)取為(wei)175℃。不應(ying)采(cai)用加(jia)速老(lao)煉(lian)(lian)試(shi)(shi)驗(yan)。試(shi)(shi)驗(yan)時(shi)高溫(wen)(wen)(wen)(wen)烤箱中所有(you)器件(jian)(jian)(jian)(jian)的(de)(de)(de)(de)環(huan)(huan)境溫(wen)(wen)(wen)(wen)度(du)(du)或殼溫(wen)(wen)(wen)(wen)的(de)(de)(de)(de)值不得小(xiao)于(yu)規(gui)定(ding)(ding)(ding)(ding)的(de)(de)(de)(de)試(shi)(shi)驗(yan)溫(wen)(wen)(wen)(wen)度(du)(du)。為(wei)了保證這一條(tiao)件(jian)(jian)(jian)(jian)的(de)(de)(de)(de)實現(xian)， 可對(dui)高溫(wen)(wen)(wen)(wen)烤箱的(de)(de)(de)(de)內(nei)部結構(gou)、負荷、控制或監測儀器的(de)(de)(de)(de)放置位(wei)置，高溫(wen)(wen)(wen)(wen)烤箱內(nei)空氣(qi)或其他氣(qi)體的(de)(de)(de)(de)流動(dong)或液(ye)體媒質等(deng)各(ge)方面作(zuo)必要(yao)的(de)(de)(de)(de)調整。
3.2測量
當有規(gui)定時(shi)，或制造廠(chang)自(zi)愿(yuan)時(shi)，應(ying)(ying)在施(shi)加老(lao)(lao)(lao)煉試(shi)驗(yan)條件(jian)前(qian)進行老(lao)(lao)(lao)煉前(qian)測(ce)試(shi)。老(lao)(lao)(lao)煉后(hou)測(ce)試(shi)應(ying)(ying)在器件(jian)移出規(gui)定老(lao)(lao)(lao)煉試(shi)驗(yan)條件(jian)后(hou)(即撤(che)除(chu)加溫或去除(chu)偏置)的(de)(de)96h內完成。測(ce)試(shi)應(ying)(ying)包括全部25℃參數(shu)測(ce)試(shi)和作(zuo)為中(zhong)間(老(lao)(lao)(lao)煉后(hou))測(ce)試(shi)的(de)(de)一部分而規(gui)定了(le)變化(hua)(hua)量極(ji)(ji)限的(de)(de)全部參數(shu)。當采用時(shi)，應(ying)(ying)根(gen)據這些測(ce)試(shi)確定參數(shu)的(de)(de)變化(hua)(hua)量極(ji)(ji)限是否超過了(le)允許(xu)的(de)(de)范圍。無論對于常規(gui)老(lao)(lao)(lao)煉試(shi)驗(yan)或加
速老煉試驗，如(ru)果不能在(zai)(zai)96h內完成這些測試，那么(me)在(zai)(zai)作老煉后的測試之(zhi)前器件(jian)應按原先的老煉條(tiao)件(jian)和原來采用的溫度至少再作老煉。
3.2.1老煉(lian)后的冷卻
去除(chu)偏(pian)(pian)置(zhi)(zhi)前，所有器(qi)件應冷卻(que)到(dao)與(yu)室溫下器(qi)件加(jia)功率時處(chu)于穩(wen)定情況(kuang)下的(de)(de)溫度之間(jian)差別不(bu)超過(guo)10℃。為了(le)(le)把器(qi)件轉移(yi)到(dao)與(yu)作老煉試(shi)驗的(de)(de)工作室不(bu)在(zai)一(yi)處(chu)的(de)(de)冷卻(que)位置(zhi)(zhi)而中斷偏(pian)(pian)置(zhi)(zhi)不(bu)超過(guo)lmin，不(bu)應看(kan)作去除(chu)了(le)(le)偏(pian)(pian)置(zhi)(zhi)(在(zai)冷卻(que)位置(zhi)(zhi)處(chu)加(jia)的(de)(de)偏(pian)(pian)置(zhi)(zhi)應與(yu)老煉時的(de)(de)偏(pian)(pian)置(zhi)(zhi)相同)。在(zai)重新加(jia)熱器(qi)件之前應完成全部25℃的(de)(de)參數測試(shi)。
3.2.2試驗裝(zhuang)置(zhi)監測
應(ying)(ying)在(zai)試驗開始和結(jie)束時，在(zai)試驗溫度下監測試驗裝置，從而證(zheng)實(shi)全(quan)部器件(jian)已(yi)按規定要(yao)求施加應(ying)(ying)力。以下是至少應(ying)(ying)進行的監測程序:
a.器件插座
在開(kai)始(shi)使(shi)用(yong)(yong)插座(zuo)時(shi)和以(yi)后至多每(mei)隔六個(ge)(ge)月(yue)(yue)(每(mei)六個(ge)(ge)月(yue)(yue)一-次(ci)或(huo)在六個(ge)(ge)月(yue)(yue)期間未使(shi)用(yong)(yong)，則使(shi)用(yong)(yong)前都應(ying)檢查每(mei)塊試(shi)(shi)(shi)驗(yan)板或(huo)試(shi)(shi)(shi)驗(yan)座(zuo)，以(yi)驗(yan)證(zheng)(zheng)連(lian)(lian)接點的(de)連(lian)(lian)續性(xing)，從(cong)而(er)保證(zheng)(zheng)能把偏置電(dian)壓和信號加到每(mei)個(ge)(ge)插座(zuo)上。試(shi)(shi)(shi)驗(yan)板上用(yong)(yong)于穩定(ding)被試(shi)(shi)(shi)器件(jian)(jian)工作的(de)電(dian)容(rong)器和電(dian)阻器也應(ying)按此(ci)方式(shi)驗(yan)證(zheng)(zheng)，以(yi)確信它(ta)們(men)能起(qi)到其應(ying)起(qi)的(de)作用(yong)(yong)(即不應(ying)出現開(kai)路或(huo)短路)。除了這種初的(de)和定(ding)期性(xing)的(de)驗(yan)證(zheng)(zheng)外(wai)，不必在每(mei)次(ci)試(shi)(shi)(shi)驗(yan)時(shi)逐個(ge)(ge)檢查器件(jian)(jian)或(huo)器件(jian)(jian)插座(zuo)，但在使(shi)用(yong)(yong)每(mei)塊試(shi)(shi)(shi)驗(yan)板前應(ying)采用(yong)(yong)隨機(ji)抽樣技術，這就可以(yi)保證(zheng)(zheng)與被試(shi)(shi)(shi)器件(jian)(jian)電(dian)連(lian)(lian)接的(de)正確性(xing)和連(lian)(lian)續性(xing)。
b.試(shi)驗板(ban)或試(shi)驗座(zuo)的連接件
將器件(jian)裝入試(shi)(shi)驗(yan)(yan)板(ban)、插入高(gao)溫(wen)烤箱(xiang)(xiang)并升(sheng)溫(wen)到溫(wen)度(du)至(zhi)少為(wei)125℃(若(ruo)小于125℃，則為(wei)規定(ding)(ding)試(shi)(shi)驗(yan)(yan)溫(wen)度(du))的(de)高(gao)溫(wen)烤箱(xiang)(xiang)后，應至(zhi)少在(zai)(zai)每塊試(shi)(shi)驗(yan)(yan)板(ban)或(huo)試(shi)(shi)驗(yan)(yan)座的(de)--個位置上驗(yan)(yan)證要求的(de)試(shi)(shi)驗(yan)(yan)信號,從而保證在(zai)(zai)采(cai)用的(de)試(shi)(shi)驗(yan)(yan)布局(ju)中所使用的(de)每條連(lian)線(xian)或(huo)接插件(jian)均已正(zheng)確施加了規定(ding)(ding)的(de)應力并具有連(lian)續性(xing)。為(wei)進行(xing)這種驗(yan)(yan)證允(yun)許打開高(gao)溫(wen)烤箱(xiang)(xiang)不(bu)超過10min。
c.在試驗(yan)過(guo)程(cheng)結(jie)束時，使器件(jian)降低溫度和撤除試驗(yan)條件(jian)前，應重復上述b條關(guan)于信(xin)號的驗(yan)證(zheng)過(guo)程(cheng)。
若在(zai)規定進行的(de)(de)(de)(de)(de)試(shi)驗(yan)時(shi)間(jian)內(nei)的(de)(de)(de)(de)(de)某段時(shi)間(jian)出現了導致必(bi)要的(de)(de)(de)(de)(de)試(shi)驗(yan)應(ying)(ying)力(li)未能加到器件上去的(de)(de)(de)(de)(de)失效或(huo)接觸開路時(shi)，應(ying)(ying)延長(chang)試(shi)驗(yan)時(shi)間(jian)以保證實際受(shou)應(ying)(ying)力(li)作用(yong)的(de)(de)(de)(de)(de)時(shi)間(jian)滿足(zu)規定的(de)(de)(de)(de)(de)少(shao)總試(shi)驗(yan)時(shi)間(jian)要求。若在(zai)老(lao)煉(lian)的(de)(de)(de)(de)(de)后(hou)8h
內(nei)，在(zai)溫度(du)未變的(de)(de)(de)(de)(de)情況下，偏(pian)置(zhi)中斷(duan)(duan)的(de)(de)(de)(de)(de)總時(shi)間(jian)超過了10rain，就要求從后(hou)一.次偏(pian)置(zhi)中斷(duan)(duan)時(shi)刻算起(qi)，至(zhi)少(shao)再作8h不中斷(duan)(duan)的(de)(de)(de)(de)(de)老(lao)煉(lian)。
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