溫度對大功率LED可靠性的影響
作(zuo)者:
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編輯:
瑞凱儀器(qi)
來源:
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發布日期: 2020.06.19
電(dian)(dian)子(zi)產(chan)品的可(ke)(ke)靠性和(he)壽(shou)命對溫度(du)非常敏感。溫度(du)升(sheng)高(gao)(gao)時(shi),器件(jian)故障率(lv)迅(xun)速(su)增大(da)。根(gen)據阿侖(lun)尼(ni)烏斯模(mo)型可(ke)(ke)知,當溫度(du)超過(guo)(guo)一定(ding)值(zhi)時(shi),器件(jian)的壽(shou)命呈(cheng)指數規律下降。大(da)功(gong)率(lv)LED的結(jie)溫常常比較高(gao)(gao),這是(shi)因(yin)為(wei)(wei)(1)芯(xin)(xin)片(pian)(pian)的內(nei)量(liang)子(zi)效(xiao)率(lv)不(bu)可(ke)(ke)能(neng)達到100%。注入(ru)的電(dian)(dian)荷(空穴)只有(you)(you)(you)一部(bu)(bu)分(fen)發(fa)生輻射(she)復合,產(chan)生光(guang)(guang)(guang)子(zi),另一部(bu)(bu)分(fen)則(ze)終(zhong)(zhong)變(bian)成熱(re)(re)(re); (2) LED芯(xin)(xin)片(pian)(pian)材(cai)料(liao)(liao)與(yu)其(qi)周(zhou)圍材(cai)料(liao)(liao)的折射(she)系數的不(bu)一致(zhi),致(zhi)使芯(xin)(xin)片(pian)(pian)內(nei)部(bu)(bu)產(chan)生的一部(bu)(bu)分(fen)光(guang)(guang)(guang)子(zi)無(wu)法順利地從芯(xin)(xin)片(pian)(pian)中溢出,而(er)是(shi)在(zai)界面處產(chan)生全反射(she),返回(hui)到芯(xin)(xin)片(pian)(pian)內(nei)部(bu)(bu)。熒光(guang)(guang)(guang)粉激發(fa)出的光(guang)(guang)(guang)也有(you)(you)(you)一部(bu)(bu)分(fen)進(jin)入(ru)芯(xin)(xin)片(pian)(pian)內(nei)部(bu)(bu)。這些(xie)光(guang)(guang)(guang)在(zai)LED芯(xin)(xin)片(pian)(pian)內(nei)部(bu)(bu)經(jing)過(guo)(guo)多(duo)次反射(she)后終(zhong)(zhong)被芯(xin)(xin)片(pian)(pian)材(cai)料(liao)(liao)或襯(chen)底吸收,以晶格振動(dong)的形(xing)式變(bian)成熱(re)(re)(re);
(3) 芯(xin)(xin)片(pian)(pian)上的電(dian)(dian)極結(jie)構、表面ITO層(ceng)和(he)PN結(jie)的材(cai)料(liao)(liao)等均存在(zai)一定(ding)的電(dian)(dian)阻值(zhi),當電(dian)(dian)流(liu)流(liu)過(guo)(guo)時(shi),這些(xie)電(dian)(dian)阻就會(hui)產(chan)生焦(jiao)耳熱(re)(re)(re)。從電(dian)(dian)能(neng)到終(zhong)(zhong)從芯(xin)(xin)片(pian)(pian)出射(she)的光(guang)(guang)(guang)能(neng)之間的變(bian)換有(you)(you)(you)必然的損耗(hao),損耗(hao)的那(nei)部(bu)(bu)分(fen)能(neng)量(liang)轉化為(wei)(wei)熱(re)(re)(re)量(liang),使芯(xin)(xin)片(pian)(pian)的溫度(du)不(bu)斷(duan)升(sheng)高(gao)(gao),這就是(shi)LED芯(xin)(xin)片(pian)(pian)的自加熱(re)(re)(re)效(xiao)應。如果沒有(you)(you)(you)良好(hao)的散熱(re)(re)(re),使芯(xin)(xin)片(pian)(pian)產(chan)生的熱(re)(re)(re)量(liang)散發(fa)不(bu)出去,那(nei)么芯(xin)(xin)片(pian)(pian)的結(jie)溫就會(hui)過(guo)(guo)高(gao)(gao),引起(qi)LED光(guang)(guang)(guang)源性能(neng)的下降和(he)可(ke)(ke)靠性的降低,終(zhong)(zhong)導致(zhi)失效(xiao)。
溫(wen)度(du)(du)過(guo)高(gao)會(hui)(hui)引起芯片(pian)(pian)性能(neng)和熒(ying)(ying)光(guang)粉性能(neng)的下降。對LED芯片(pian)(pian)性能(neng)的影響主要表現(xian)在使內量子(zi)(zi)(zi)效率(lv)(lv)降低(di)(di)。內量子(zi)(zi)(zi)效率(lv)(lv)是溫(wen)度(du)(du)的函數(shu),溫(wen)度(du)(du)越高(gao)內量子(zi)(zi)(zi)效率(lv)(lv)越低(di)(di)。這是因為(wei)溫(wen)度(du)(du)升高(gao),電子(zi)(zi)(zi)與(yu)空(kong)穴(xue)的濃度(du)(du)會(hui)(hui)增加,禁(jin)帶寬度(du)(du)會(hui)(hui)減小,電子(zi)(zi)(zi)遷移(yi)率(lv)(lv)將減小,且勢(shi)阱中電子(zi)(zi)(zi)與(yu)空(kong)穴(xue)的輻射(she)復合幾率(lv)(lv)降低(di)(di),造成非輻射(she)復合,從而(er)降低(di)(di)LED的內量子(zi)(zi)(zi)效率(lv)(lv)。溫(wen)度(du)(du)升高(gao)導致芯片(pian)(pian)的藍光(guang)波長(chang)(chang)向(xiang)長(chang)(chang)波方向(xiang)偏移(yi),使芯片(pian)(pian)的發射(she)波長(chang)(chang)和熒(ying)(ying)光(guang)粉的激發波長(chang)(chang)不(bu)匹配,也會(hui)(hui)造成白光(guang)LED外部光(guang)提取效率(lv)(lv)的降低(di)(di)。因為(wei)溫(wen)度(du)(du)淬滅效應,溫(wen)度(du)(du)的升高(gao)會(hui)(hui)使熒(ying)(ying)光(guang)粉本(ben)身的量子(zi)(zi)(zi)效率(lv)(lv)降低(di)(di)。另外,由于硅(gui)膠和熒(ying)(ying)光(guang)粉顆(ke)粒之(zhi)間的折射(she)率(lv)(lv)和熱膨脹系(xi)數(shu)不(bu)匹配,過(guo)高(gao)的溫(wen)度(du)(du)也會(hui)(hui)使熒(ying)(ying)光(guang)粉層的光(guang)轉換效率(lv)(lv)下降。
溫度(du)(du)(du)對LED光源可靠性(xing)(xing)的(de)影響主(zhu)要表現(xian)在使LED出現(xian)光通量(liang)的(de)下(xia)(xia)降(jiang)和其他失效(xiao)(xiao)形(xing)式,縮短LED的(de)壽(shou)命。過高(gao)(gao)的(de)溫度(du)(du)(du)會使LED芯(xin)片(pian)壽(shou)命變短。因(yin)為高(gao)(gao)溫會使芯(xin)片(pian)材(cai)料老(lao)化(hua)加快(kuai)、性(xing)(xing)能下(xia)(xia)降(jiang)。高(gao)(gao)溫引起(qi)的(de)內量(liang)子效(xiao)(xiao)率的(de)降(jiang)低(di)也會使更(geng)多(duo)的(de)電不(bu)能以光的(de)形(xing)式透射出去,而是轉化(hua)成熱使結(jie)溫升(sheng)高(gao)(gao),更(geng)加加速LED芯(xin)片(pian)的(de)老(lao)化(hua);高(gao)(gao)溫也會引起(qi)封裝材(cai)料降(jiang)解加快(kuai)、性(xing)(xing)能下(xia)(xia)降(jiang)。過高(gao)(gao)的(de)溫度(du)(du)(du)會使灌(guan)封膠的(de)顏色變黃(huang),使得LED光效(xiao)(xiao)急劇(ju)降(jiang)低(di)
或造(zao)成(cheng)災難(nan)性失效(xiao)。因為膠類的封(feng)裝(zhuang)材(cai)(cai)料為熱(re)的不良導體,結溫和外界環境溫度(du)之(zhi)間的溫度(du)差(cha)會造(zao)成(cheng)LED內部較高的溫度(du)梯度(du),由于材(cai)(cai)料之(zhi)間的CTE失配,使(shi)LED發(fa)生分層、裂紋、金線斷裂等失效(xiao)形(xing)式(shi)。
研究LED光源在高溫(wen)下的(de)(de)(de)失效機(ji)制(zhi),找出高溫(wen)下會引(yin)發的(de)(de)(de)缺陷或(huo)者設計的(de)(de)(de)薄弱(ruo)環(huan)節,對提高LED光源的(de)(de)(de)可(ke)靠性(xing)(xing)具有非常(chang)重要(yao)的(de)(de)(de)意義。對于LED這(zhe)類(lei)超長壽命的(de)(de)(de)電(dian)子器件(jian),通常(chang)使(shi)(shi)用(yong)比正常(chang)使(shi)(shi)用(yong)時所預期的(de)(de)(de)溫(wen)度更高的(de)(de)(de)溫(wen)度來進行(xing)可(ke)靠性(xing)(xing)試驗(yan),即(ji)加(jia)(jia)速試驗(yan)。施加(jia)(jia)的(de)(de)(de)加(jia)(jia)速條件(jian)會使(shi)(shi)潛在的(de)(de)(de)缺陷或(huo)者設計的(de)(de)(de)薄弱(ruo)環(huan)節在較短的(de)(de)(de)時間內發展為實(shi)際的(de)(de)(de)失效,確(que)認溫(wen)度可(ke)能導(dao)致的(de)(de)(de)失效的(de)(de)(de)形式和機(ji)制(zhi)。