近幾年來,本實(shi)驗室(shi)連續開展了(le)(le)大(da)規(gui)模集成電(dian)(dian)路(lu)(lu)的(de)新品檢測(ce)(ce)(ce)(ce)工作,如(ru)偵察運算電(dian)(dian)路(lu)(lu)、BCH 編譯碼器、CRT地(di)址產生(sheng)電(dian)(dian)路(lu)(lu)及接口電(dian)(dian)路(lu)(lu)等,基本上都是規(gui)模較(jiao)大(da)的(de)CMOS電(dian)(dian)路(lu)(lu),對靜(jing)(jing)電(dian)(dian)敏(min)感,工作速(su)度較(jiao)快(kuai)。在高(gao)、低溫電(dian)(dian)性能測(ce)(ce)(ce)(ce)試(shi)中成功地(di)采用了(le)(le)該集成電(dian)(dian)路(lu)(lu)高(gao)、低溫電(dian)(dian)性能測(ce)(ce)(ce)(ce)試(shi)系統,積累了(le)(le)一些(xie)有益的(de)經驗。通過實(shi)際應用發現,必須注意(yi)以下一些(xie)具(ju)體的(de)環(huan)節,如(ru)測(ce)(ce)(ce)(ce)試(shi)板的(de)隔離、防潮,被測(ce)(ce)(ce)(ce)器件(jian)的(de)靜(jing)(jing)電(dian)(dian)保護,被測(ce)(ce)(ce)(ce)器件(jian)芯片溫度的(de)確定等問題、才(cai)能快(kuai)速(su)、準確地(di)完成CMOSVLSI的(de)高(gao)、低溫電(dian)(dian)性能測(ce)(ce)(ce)(ce)試(shi)。
在(zai)(zai)(zai)高、低(di)(di)溫(wen)(wen)(wen)測(ce)(ce)試(shi)(shi)(shi)(shi)時(shi),將(jiang)(jiang)變溫(wen)(wen)(wen)頭(tou)(tou)直(zhi)接(jie)罩在(zai)(zai)(zai)測(ce)(ce)試(shi)(shi)(shi)(shi)設(she)備(bei)的(de)(de)DUT板(ban)上,如(ru)果(guo)不采(cai)取隔(ge)離措施(shi),測(ce)(ce)試(shi)(shi)(shi)(shi)設(she)備(bei)的(de)(de)DUT板(ban)將(jiang)(jiang)會(hui)處于(yu)+125℃的(de)(de)高溫(wen)(wen)(wen)和-55℃的(de)(de)低(di)(di)溫(wen)(wen)(wen)環(huan)境(jing),勢(shi)必影響(xiang)測(ce)(ce)試(shi)(shi)(shi)(shi)系(xi)(xi)統(tong)的(de)(de)性能和測(ce)(ce)試(shi)(shi)(shi)(shi)結果(guo)。在(zai)(zai)(zai)實(shi)際測(ce)(ce)試(shi)(shi)(shi)(shi)時(shi),我們將(jiang)(jiang)一種防(fang)靜(jing)電(dian)(dian)(dian)的(de)(de)隔(ge)熱(re)膠墊(dian)放在(zai)(zai)(zai)測(ce)(ce)試(shi)(shi)(shi)(shi)系(xi)(xi)統(tong)的(de)(de)DUT板(ban)上,在(zai)(zai)(zai)測(ce)(ce)試(shi)(shi)(shi)(shi)夾具(ju)處開一小口將(jiang)(jiang)測(ce)(ce)試(shi)(shi)(shi)(shi)夾具(ju)露(lu)出,這(zhe)樣(yang)(yang)(yang)對(dui)測(ce)(ce)試(shi)(shi)(shi)(shi)系(xi)(xi)統(tong)的(de)(de)DUT板(ban)起到一定的(de)(de)保護作用,但如(ru)果(guo)DUT板(ban)長期處于(yu)高溫(wen)(wen)(wen)或低(di)(di)溫(wen)(wen)(wen)環(huan)境(jing),隔(ge)熱(re)膠墊(dian)的(de)(de)作用將(jiang)(jiang)大為(wei)減弱,基于(yu)此,我們在(zai)(zai)(zai)設(she)置溫(wen)(wen)(wen)度(du)(du)(du)控制程(cheng)序(xu)(xu)(xu)(xu)時(shi)對(dui)它進行了(le)調整。在(zai)(zai)(zai)高溫(wen)(wen)(wen)測(ce)(ce)試(shi)(shi)(shi)(shi)時(shi),將(jiang)(jiang)溫(wen)(wen)(wen)度(du)(du)(du)控制程(cheng)序(xu)(xu)(xu)(xu)設(she)為(wei),在(zai)(zai)(zai)每個樣(yang)(yang)(yang)品(pin)測(ce)(ce)試(shi)(shi)(shi)(shi)完成換(huan)(huan)(huan)樣(yang)(yang)(yang)品(pin)前,讓(rang)(rang)變溫(wen)(wen)(wen)頭(tou)(tou)向DUT板(ban)送(song)涼氣(qi)流10
s,然后(hou)才(cai)結束溫(wen)(wen)(wen)控程(cheng)序(xu)(xu)(xu)(xu)換(huan)(huan)(huan)樣(yang)(yang)(yang)品(pin),這(zhe)樣(yang)(yang)(yang)就(jiu)加速了(le)DUT板(ban)的(de)(de)散熱(re),將(jiang)(jiang)高溫(wen)(wen)(wen)對(dui)DUT板(ban)造成的(de)(de)影響(xiang)降到。在(zai)(zai)(zai)低(di)(di)溫(wen)(wen)(wen)測(ce)(ce)試(shi)(shi)(shi)(shi)時(shi),將(jiang)(jiang)溫(wen)(wen)(wen)度(du)(du)(du)控制程(cheng)序(xu)(xu)(xu)(xu)設(she)為(wei),在(zai)(zai)(zai)每個樣(yang)(yang)(yang)品(pin)測(ce)(ce)試(shi)(shi)(shi)(shi)完成換(huan)(huan)(huan)樣(yang)(yang)(yang)品(pin)前,讓(rang)(rang)變溫(wen)(wen)(wen)頭(tou)(tou)向DUT板(ban)送(song)熱(re)氣(qi)流10s,然后(hou)才(cai)結束溫(wen)(wen)(wen)控程(cheng)序(xu)(xu)(xu)(xu)換(huan)(huan)(huan)樣(yang)(yang)(yang)品(pin),這(zhe)樣(yang)(yang)(yang)DUT板(ban)上的(de)(de)溫(wen)(wen)(wen)度(du)(du)(du)已接(jie)近(jin)室(shi)溫(wen)(wen)(wen),在(zai)(zai)(zai)換(huan)(huan)(huan)樣(yang)(yang)(yang)品(pin)時(shi)就(jiu)避免了(le)環(huan)境(jing)溫(wen)(wen)(wen)度(du)(du)(du)與低(di)(di)溫(wen)(wen)(wen)的(de)(de)對(dui)流,造成DUT板(ban)凝水(shui)。對(dui)于(yu)被(bei)(bei)測(ce)(ce)器(qi)(qi)件的(de)(de)防(fang)靜(jing)電(dian)(dian)(dian)措施(shi)有:隔(ge)熱(re)膠墊(dian)采(cai)用防(fang)靜(jing)電(dian)(dian)(dian)材(cai)料(liao);遮蓋被(bei)(bei)測(ce)(ce)器(qi)(qi)件的(de)(de)小罩由導熱(re)防(fang)靜(jing)電(dian)(dian)(dian)材(cai)料(liao)所制。
在用該高低溫(wen)(wen)循環試驗箱做(zuo)溫(wen)(wen)度(du)(du)(du)(du)測試時(shi)(shi),系(xi)(xi)統有溫(wen)(wen)度(du)(du)(du)(du)傳感器(qi)(qi)叮測到器(qi)(qi)件(jian)(jian)底(di)部(bu)的(de)(de)(de)(de)溫(wen)(wen)度(du)(du)(du)(du),雖(sui)然(ran)氣流是(shi)(shi)垂直(zhi)于DUT表面而下,但(dan)DUT的(de)(de)(de)(de)底(di)部(bu)還是(shi)(shi)屬于器(qi)(qi)件(jian)(jian)表面,如何確(que)定DUT芯片(pian)溫(wen)(wen)度(du)(du)(du)(du)的(de)(de)(de)(de)建(jian)(jian)立(li)(li)時(shi)(shi)間(jian),是(shi)(shi)個比較復(fu)雜的(de)(de)(de)(de)問題。因(yin)(yin)為DUT芯片(pian)溫(wen)(wen)度(du)(du)(du)(du)的(de)(de)(de)(de)建(jian)(jian)立(li)(li)時(shi)(shi)間(jian)受很多內素(su)的(de)(de)(de)(de)影(ying)響,如DUT的(de)(de)(de)(de)材(cai)料、形狀(zhuang)、尺寸,溫(wen)(wen)度(du)(du)(du)(du)以及氣體流量(liang)的(de)(de)(de)(de)大(da)小等因(yin)(yin)素(su)的(de)(de)(de)(de)影(ying)響。不同(tong)的(de)(de)(de)(de)器(qi)(qi)件(jian)(jian)芯片(pian)溫(wen)(wen)度(du)(du)(du)(du)的(de)(de)(de)(de)建(jian)(jian)立(li)(li)時(shi)(shi)間(jian)是(shi)(shi)不一(yi)樣(yang)的(de)(de)(de)(de)溫(wen)(wen)度(du)(du)(du)(du)建(jian)(jian)立(li)(li)時(shi)(shi)間(jian)是(shi)(shi)指系(xi)(xi)統變溫(wen)(wen)(升溫(wen)(wen)獲降溫(wen)(wen))開始,到建(jian)(jian)立(li)(li)新的(de)(de)(de)(de)熱平衡,即被測器(qi)(qi)件(jian)(jian)芯片(pian)溫(wen)(wen)度(du)(du)(du)(du)達到設定值這一(yi)段時(shi)(shi)間(jian)。某公司給出了1000Ω電阻溫(wen)(wen)度(du)(du)(du)(du)探測器(qi)(qi)(RTD)的(de)(de)(de)(de)溫(wen)(wen)度(du)(du)(du)(du)建(jian)(jian)立(li)(li)時(shi)(shi)間(jian)曲線,如圖3所示。圖3表明不同(tong)的(de)(de)(de)(de)RTD其溫(wen)(wen)度(du)(du)(du)(du)建(jian)(jian)立(li)(li)時(shi)(shi)間(jian)是(shi)(shi)不同(tong)的(de)(de)(de)(de)。
DUT芯片溫度(du)的(de)(de)(de)建立時(shi)(shi)間(jian)對(dui)于高(gao)(gao)、低(di)溫測(ce)試(shi)(shi)(shi)是非(fei)常重要的(de)(de)(de)指標(biao),只有在大(da)于建立時(shi)(shi)間(jian)的(de)(de)(de)時(shi)(shi)間(jian)段內測(ce)試(shi)(shi)(shi),測(ce)試(shi)(shi)(shi)的(de)(de)(de)數據才能真(zhen)正地(di)反映設定(ding)溫度(du)點(dian)的(de)(de)(de)性(xing)(xing)能及具(ju)有重復性(xing)(xing)。對(dui)于復雜的(de)(de)(de)大(da)規模集成電(dian)(dian)(dian)路,我們采(cai)取在開始高(gao)(gao)、低(di)溫測(ce)試(shi)(shi)(shi)前(qian),通(tong)過(guo)反復試(shi)(shi)(shi)驗(yan),確定(ding)被(bei)(bei)測(ce)器件(jian)(jian)芯片溫度(du)的(de)(de)(de)建立時(shi)(shi)間(jian)。在熱流系統顯示達(da)到設定(ding)溫度(du)開始,對(dui)被(bei)(bei)測(ce)器件(jian)(jian)進行多次(ci)電(dian)(dian)(dian)參(can)數測(ce)試(shi)(shi)(shi),當(dang)其電(dian)(dian)(dian)參(can)數趨于穩定(ding)并具(ju)有可(ke)重復性(xing)(xing)時(shi)(shi),將這段時(shi)(shi)間(jian)確定(ding)為(wei)DUT心片溫度(du)的(de)(de)(de)建立時(shi)(shi)間(jian)。經過(guo)反復試(shi)(shi)(shi)驗(yan)發現(xian),系統的(de)(de)(de)溫度(du)傳感器測(ce)得(de)的(de)(de)(de)被(bei)(bei)測(ce)器件(jian)(jian)底部溫度(du)與芯片溫度(du)基(ji)本一致。
高低溫測試設備推(tui)薦
瑞凱RK-TH-408高低溫循環試驗箱(Temperature Cycling Test)是利用高溫低溫循環變化測試來評估集成電路IC芯片等產品對溫度變化的抵抗能力。主要是利用高溫低溫循環變化,來測試電子元器件、半導體、IC芯片等產品上各層不同物質之熱膨脹俘數不同,而可能引起之故障機制。在此測試中因所用之溫度介質為氣相,故一般亦稱為air to air測試。
滿足標準
瑞凱(kai)RK-TH-408高低(di)溫循(xun)環試驗箱滿足GB/T2423.1(IEC60068-2-1);
GB/T2423.2(IEC60068-2-2);
ISO16750;
GB/T14710;
GB/T13543;
JESD22等系列(lie)標(biao)準中的(de)溫度試驗。
RK-TH-408高低溫循環試驗箱規(gui)格參數